SI1317DL-T1-GE3 Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге

Компоненты Описание

производитель

SI1317DL-T1-GE3

P-Channel 20 V (D-S) MOSFET

Vishay Semiconductors 

New Product

Si1317DL

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0.32

10

0.24

TJ = 150 °C

TJ = 25 °C

0.16

1

0.08

ID = 1.4 A

TJ = 125 °C

TJ = 25 °C

0.1

0.0

0.3

0.6

0.9

1.2

1.5

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0.75

0.65

ID = 250 μA

0.55

0.45

0.35

0.25

- 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

10

Limited by RDS(on)*

0.00

1

2

3

4

5

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

10

8

6

4

2

0

0.001

0.01

0.1

1

10

100

Time (s)

Single Pulse Power, Junction-to-Ambient

100 μs

1

1 ms

0.1

TA = 25 °C

Single Pulse

10 ms

100 ms

BVDSS Limited

1s

10 s, DC

0.01

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

www.vishay.com

4

Document Number: 67194

S10-2764-Rev. A, 29-Nov-10

Share Link: