SI1330EDL Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
SI1330EDL Datasheet PDF : 5 Pages
| |||
Si1330EDL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4.0
7
3.5
3.0
2.5
2.0
VGS = 4.5 V
1.5
1.0
0.5
VGS = 10 V
6
VDS = 10 V
ID = 250 mA
5
4
3
2
1
0.0
0.0
0.2
0.4
0.6
0.8
1.0
ID - Drain Current (mA)
On-Resistance vs. Drain Current
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Qg - Total Gate Charge (nC)
Gate Charge
2.0
VGS = 10 V at 250 mA
1.6
1000
VGS = 0 V
1.2
VGS = 4.5 V
at 200 mA
100
TJ = 125 °C
0.8
10
TJ = 25 °C
0.4
TJ = - 55 °C
0.0
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
5
ID = 200 mA
4
3
2
1
1
0
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
ID = 250 µA
0.0
- 0.2
- 0.4
- 0.6
0
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
- 0.8
- 50 - 25 0
25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage Variance over Temperature
Document Number: 72861
S10-0721-Rev. B, 29-Mar-10
www.vishay.com
3
Share Link: 