SI1330EDL(2004) Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

SI1330EDL
(Rev.:2004)

N-Channel 60-V (D-S) MOSFET

Vishay Semiconductors 

New Product

N-Channel 60-V (D-S) MOSFET

Si1330EDL

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

2.5 @ VGS = 10 V

60

3 @ VGS = 4.5 V

8 @ VGS = 3 V

ID (A)

0.25

0.23

0.05

FEATURES

D TrenchFETr Power MOSFET

D ESD Protected: 2000 V

APPLICATIONS

D P-Channel Driver

− Notebook PC

− Servers

SOT-323

SC-70 (3-LEADS)

D

G1

S2

3D

Marking Code

G

KD XX

Lot Traceability

and Date Code

Part # Code

Top View

S

Ordering Information: Si1330EDL-T1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (TJ = 150_C)a

Pulsed Drain Current

Continuous Diode Current (Diode Conduction)a

Maximum Power Dissipationa

Operating Junction and Storage Temperature Range

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

VDS

VGS

ID

IDM

IS

PD

TJ, Tstg

60

"20

0.25

0.24

0.2

0.19

1.0

0.26

0.23

0.31

0.28

0.20

0.18

−55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambienta

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

t v 5 sec

Steady State

Steady State

Symbol

RthJA

RthJF

Typical

355

380

285

Maximum

400

450

340

Unit

V

A

W

_C

Unit

_C/W

Document Number: 72861

S-40853—Rev. A, 03-May-04

www.vishay.com

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