SG6100 Просмотр технического описания (PDF) - Microsemi Corporation

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SG6100

DIODE ARRAY CIRCUITS

Microsemi Corporation 

SG6100/SG6511

SG6101/SG6510

DIODE ARRAY CIRCUITS

DESCRIPTION

The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic,

high breakdown, fast switching speed diode arrays. The SG6100/SG6511

is configured with 7 straight through diodes, while the SG6101/SG6510 has

8 straight through diodes.

These two diode array configurations allow the designer maximum flexibility

for circuit design and board layout. Since each diode within the array has

individual anode and cathode connections the device may be used in a

variety of applications. Also, due to the array's monolithic construction the

diode electrical parameters are very closely matched.

Both devices are available in ceramic DIP and flatpack and can be processed

to Linfinity's S level, JANTXV, JANTX, or JAN equivalent flows.

FEATURES

• 75V minimum breakdown voltage

• 100mA current capability per diode

• Switching speeds less than 5ns

• Low leakage current < 25nA

HIGH RELIABILITY FEATURES

♦ MIL-S-19500/474 QPL - 1N6100

- 1N6101

- 1N6510

- 1N6511

♦ Equivalent JANS, JANTXV, JANTX, JAN

screening available

CIRCUIT DIAGRAMS

6/91 Rev 1.1 2/94

Copyright © 1994

7 - STRAIGHT THROUGH DIODES

SG6100/SG6511

8 - STRAIGHT THROUGH DIODES

SG6101/SG6510

LINFINITY Microelectronics Inc.

1

11861 Western Avenue ∞ Garden Grove, CA 92841

(714) 898-8121 ∞ FAX: (714) 893-2570

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