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SDT320 Просмотр технического описания (PDF) - Sirectifier Electronics

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Компоненты Описание
производитель
SDT320 Datasheet PDF : 4 Pages
1 2 3 4
STD/SDT320
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 2 i2t versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 4 Gate trigger characteristics
3 x STD/SDT320
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 6 Gate trigger delay time

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