SBF13007-O Просмотр технического описания (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd

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SBF13007-O

High Voltage Fast-Switching NPN Power Transistor

Shenzhen Winsemi Microelectronics Co., Ltd 

SBF13007-O

High Voltage Fast-Switching NPN Power Transistor

Features

◆ Very High Switching Speed

◆ High Voltage Capability

◆ Wide Reverse Bias SOA

◆ Isolation Voltage ( VISO = 4000V AC )

General Description

This device is designed for high voltage, High speed

switching characteristics required such as lighting

system ,switching mode power supply.

B

C

E TO220F

Absolute Maximum Ratings

Symbol

Parameter

VCES

Collector-Emitter Voltage

VCEO

VEBO

IC

ICP

IB

IBM

PC

TJ

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector pulse Current

Base Current

Base Peak Current

Total Dissipation at Tc = 25℃

Operation Junction Temperature

TSTG

Storage Temperature

Tc: Case temperature (good cooling)

Test Conditions

VBE = 0

IB = 0

IC = 0

tP = 5ms

Thermal Characteristics

Symbol

Parameter

RθJc

Thermal Resistance Junction to Case

RθJA

Thermal Resistance Junction to Ambient

Value

700

400

9.0

8.0

16

4.0

8.0

40

- 40 ~ 150

- 40 ~ 150

Units

V

V

V

A

A

A

A

W

℃

℃

Value

3.13

62.5

Units

℃/W

℃/W

Jan 2008. Rev. 0

Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

T03-3

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