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PMXB360ENEA Datasheet PDF : 15 Pages
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NXP Semiconductors
PMXB360ENEA
80 V, N-channel Trench MOSFET
4.4
ID
(A)
3.3
aaa-009014
2.0
a
1.5
aaa-009015
2.2
1.0
1.1
Tj = 150 °C
Tj = 25 °C
0
0
1
2
VDS > ID × RDSon
3
4
VGS (V)
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.5
-60
0
60
120
180
Tj (°C)
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
3
VGS(th)
(V)
2
1
max
typ
min
aaa-009016
103
C
(pF)
102
10
aaa-009017
Ciss
Coss
Crss
0
-60
0
60
ID = 0.25 mA; VDS = VGS
120
180
Tj (°C)
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
1
10-1
1
f = 1 MHz; VGS = 0 V
10
102
VDS (V)
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMXB360ENEA
Product data sheet
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16 September 2013
© NXP N.V. 2013. All rights reserved
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