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PMXB360ENEA

80 V, N-channel Trench MOSFET

NXP Semiconductors. 

NXP Semiconductors

120

Pder

(%)

80

017aaa123

PMXB360ENEA

80 V, N-channel Trench MOSFET

120

Ider

(%)

80

017aaa124

40

40

0

- 75

- 25

25

75

125

175

Tj (°C)

Fig. 2. Normalized total power dissipation as a

function of junction temperature

0

- 75

- 25

25

75

125

175

Tj (°C)

Fig. 3. Normalized continuous drain current as a

function of junction temperature

10

ID

(A)

1

Limit RDSon = VDS/ID

aaa-009009

tp = 10 µs

tp = 100 µs

DC; Tsp = 25 °C

10-1

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

10-2

10-1

1

IDM = single pulse

tp = 1 ms

tp = 10 ms

tp = 100 ms

10

102

VDS (V)

Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6.

Symbol

Rth(j-a)

Thermal characteristics

Parameter

thermal resistance

from junction to

ambient

Conditions

in free air

Min Typ Max Unit

[1]

-

271 312 K/W

[2]

-

102 117 K/W

PMXB360ENEA

Product data sheet

All information provided in this document is subject to legal disclaimers.

16 September 2013

© NXP N.V. 2013. All rights reserved

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