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PMXB360ENEA

80 V, N-channel Trench MOSFET

NXP Semiconductors. 

PMXB360ENEA

80 V, N-channel Trench MOSFET

16 September 2013

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

• Logic-level compatible

• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

• Tin-plated 100 % solderable side pads for optical solder inspection

• ElectroStatic Discharge (ESD) protection > 2 kV HBM

• AEC-Q101 qualified

3. Applications

• Relay driver

• Power management in automotive and industrial applications

• LED driver

• DC-to-DC converter

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

VDS

drain-source voltage

VGS

gate-source voltage

ID

drain current

Static characteristics

RDSon

drain-source on-state

resistance

Conditions

Tj = 25 °C

VGS = 10 V; Tamb = 25 °C

VGS = 10 V; ID = 1.1 A; Tj = 25 °C

Min Typ Max Unit

-

-

80

V

-20 -

20

V

[1]

-

-

1.1 A

-

345 450 mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm2.

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