PMXB360ENEA Просмотр технического описания (PDF) - NXP Semiconductors.
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PMXB360ENEA Datasheet PDF : 15 Pages
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NXP Semiconductors
11. Test information
PMXB360ENEA
80 V, N-channel Trench MOSFET
P
t2
duty cycle δ =
t1
t2
t1
Fig. 18. Duty cycle definition
t
006aaa812
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12. Package outline
0.95
1.05
0.1
0.04
max
0.34
0.40
Dimensions in mm
Fig. 19. Package outline DFN1010D-3 (SOT1215)
0.87
0.95
0.75
0.22
0.30
1
2
0.17
0.25
3
0.245
0.325 1.05
1.15
0.16
0.24
0.195
0.275
13-03-05
PMXB360ENEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 September 2013
© NXP N.V. 2013. All rights reserved
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