PMXB120EPE Просмотр технического описания (PDF) - NXP Semiconductors.
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PMXB120EPE Datasheet PDF : 15 Pages
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NXP Semiconductors
-10
VGS
(V)
-8
aaa-009339
-6
-4
-2
0
0
2
4
6
8
QG (nC)
ID = -2.4 A; VDS = -15 V; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
-4
IS
(A)
-3
PMXB120EPE
30 V, P-channel Trench MOSFET
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
017aaa137
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
aaa-009340
-2
-1
Tj = 150 °C
VGS = 0 V
Tj = 25 °C
0
0
-0.4
-0.8
-1.2
VSD (V)
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
Fig. 18. Duty cycle definition
PMXB120EPE
Product data sheet
t
006aaa812
All information provided in this document is subject to legal disclaimers.
24 September 2013
© NXP N.V. 2013. All rights reserved
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