PMXB120EPE Просмотр технического описания (PDF) - NXP Semiconductors.
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PMXB120EPE Datasheet PDF : 15 Pages
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NXP Semiconductors
PMXB120EPE
30 V, P-channel Trench MOSFET
-10
ID
(A)
-8
-5.0 V
-6 -10.0 V
-4.5 V
aaa-009331
-4.0 V
-3.5 V
-10-3
ID
(A)
-10-4
-10-5
min typ
aaa-009332
max
-4
-10-6
VGS = -3.0 V
-2
-10-7
0
0
-1
-2
-3
-4
VDS (V)
Tj = 25 °C
-10-8
0
-1
Tj = 25 °C; VDS = -5 V
-2
-3
VGS (V)
Fig. 7. Output characteristics: drain current as a
Fig. 8. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
400
aaa-009333
600
aaa-009334
RDSon
(mΩ)
-3 V
300
-3.5 V
-4 V
RDSon
(mΩ)
400
200
-4.5 V
-5 V
200
Tj = 150 °C
100
VGS = -10 V
Tj = 25 °C
0
0
-2
-4
-6
-8
-10
ID (A)
Tj = 25 °C
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
0
0
-2
-4
-6
-8
-10
VGS (V)
ID = -2.4 A
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMXB120EPE
Product data sheet
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24 September 2013
© NXP N.V. 2013. All rights reserved
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