PMXB120EPE Просмотр технического описания (PDF) - NXP Semiconductors.
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PMXB120EPE Datasheet PDF : 15 Pages
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NXP Semiconductors
PMXB120EPE
30 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
drain leakage current VDS = -30 V; VGS = 0 V; Tj = 25 °C
IGSS
gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = -10 V; ID = -2.4 A; Tj = 25 °C
VGS = -10 V; ID = -2.4 A; Tj = 150 °C
VGS = -4.5 V; ID = -2 A; Tj = 25 °C
gfs
forward
VDS = -10 V; ID = -2.4 A; Tj = 25 °C
transconductance
RG
gate resistance
f = 1 MHz
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
VDS = -15 V; ID = -2.4 A; VGS = -10 V;
Tj = 25 °C
QGD
gate-drain charge
Ciss
input capacitance
VDS = -15 V; f = 1 MHz; VGS = 0 V;
Coss
output capacitance
Tj = 25 °C
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = -15 V; ID = -2.4 A; VGS = -10 V;
RG(ext) = 6 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = -0.9 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
-30 -
-
V
-1
-1.5 -2.5 V
-
-
-1
µA
-
-
10
µA
-
-
-10 µA
-
-
1
µA
-
-
-1
µA
-
100 120 mΩ
-
156 187 mΩ
-
125 170 mΩ
-
5
-
S
-
14.5 -
Ω
-
6.2 11
nC
-
0.9 -
nC
-
1.1 -
nC
-
309 -
pF
-
41
-
pF
-
32
-
pF
-
4
-
ns
-
11
-
ns
-
16
-
ns
-
7
-
ns
-
-0.8 -1.2 V
PMXB120EPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 September 2013
© NXP N.V. 2013. All rights reserved
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