PMXB120EPE Просмотр технического описания (PDF) - NXP Semiconductors.

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PMXB120EPE

30 V, P-channel Trench MOSFET

NXP Semiconductors. 

PMXB120EPE

30 V, P-channel Trench MOSFET

24 September 2013

Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

• Trench MOSFET technology

• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

• Exposed drain pad for excellent thermal conduction

• ElectroStatic Discharge (ESD) protection 1 kV HBM

• Drain-source on-state resistance RDSon = 100 mΩ

3. Applications

• High-side load switch and charging switch for portable devices

• Power management in battery driven portables

• LED driver

• DC-to-DC converter

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

VDS

drain-source voltage

VGS

gate-source voltage

ID

drain current

Static characteristics

RDSon

drain-source on-state

resistance

Conditions

Tj = 25 °C

VGS = -10 V; Tamb = 25 °C

VGS = -10 V; ID = -2.4 A; Tj = 25 °C

Min Typ Max Unit

-

-

-30 V

-20 -

20

V

[1]

-

-

-2.4 A

-

100 120 mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm2.

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