PMXB120EPE Просмотр технического описания (PDF) - NXP Semiconductors.

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производитель

PMXB120EPE

30 V, P-channel Trench MOSFET

NXP Semiconductors. 

NXP Semiconductors

PMXB120EPE

30 V, P-channel Trench MOSFET

12. Package outline

DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads;

3 terminals; body: 1.1 x 1.0 x 0.37 mm

SOT1215

visible depend upon

used manufacturing

technology (2x)

solderable lead

end, protrusion

max. 0.02 mm (3x)

D

pin 1

index area

visible depend upon

used manufacturing

technology (4x)

e

b (2x)

1

2

L (2x)

E

e1

E1

L1

3

A1

b1

A

D1

Dimensions (mm are the original dimensions)

0

1 mm

scale

Unit

A A1 b b1 D D1 E E1 e e1 L L1

min 0.34

0.22 0.245 1.05 0.87 0.95 0.16

0.17 0.195

mm nom 0.37

0.25 0.275 1.10 0.90 1.00 0.19 0.75 0.1 0.20 0.225

max 0.40 0.04 0.30 0.325 1.15 0.95 1.05 0.24

0.25 0.275

Note

1. Dimension A is including plating thickness.

Outline

version

References

IEC

JEDEC

JEITA

SOT1215

Fig. 19. Package outline DFN1010D-3 (SOT1215)

PMXB120EPE

Product data sheet

All information provided in this document is subject to legal disclaimers.

24 September 2013

European

projection

sot1215_po

Issue date

13-03-05

13-03-06

© NXP N.V. 2013. All rights reserved

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