PMXB65ENE Просмотр технического описания (PDF) - NXP Semiconductors.
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PMXB65ENE Datasheet PDF : 15 Pages
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NXP Semiconductors
PMXB65ENE
30 V, N-channel Trench MOSFET
10
VGS
(V)
8
aaa-008916
6
4
2
0
0
2
4
6
QG(nC)
ID = 3.2 A; VDS = 15 V; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
4
IS
(A)
3
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
017aaa137
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
aaa-008917
Tj = 150 °C
2
Tj = 25 °C
1
VGS = 0 V
0
0
0.4
0.8
1.2
VSD (V)
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
Fig. 18. Duty cycle definition
PMXB65ENE
Product data sheet
t
006aaa812
All information provided in this document is subject to legal disclaimers.
20 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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