PMXB65ENE Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
производитель
PMXB65ENE Datasheet PDF : 15 Pages
| |||
NXP Semiconductors
PMXB65ENE
30 V, N-channel Trench MOSFET
12
ID
(A)
8
aaa-008905
2
a
1.5
aaa-008897
1
4
Tj = 25 °C
0.5
Tj = 150 °C
0
0
1
2
VDS > ID × RDSon
3
4
VGS (V)
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
-60
0
60
120
180
Tj (°C)
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
4
VGS(th)
(V)
3
aaa-008907
103
C
(pF)
102
aaa-008909
Ciss
2
max
10
1
typ
min
Coss
Crss
0
-60
0
60
120
180
Tj(°C)
ID = 0.25 mA; VDS = VGS
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
1
0,1
1
f = 1 MHz; VGS = 0 V
10
100
VDS (V)
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMXB65ENE
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
8 / 15
Share Link: 