PMXB65ENE Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
производитель
PMXB65ENE Datasheet PDF : 15 Pages
| |||
NXP Semiconductors
PMXB65ENE
30 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C
IGSS
gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 3.2 A; Tj = 25 °C
VGS = 10 V; ID = 3.2 A; Tj = 150 °C
VGS = 4.5 V; ID = 2.9 A
gfs
forward
VDS = 10 V; ID = 3.2 A; Tj = 25 °C
transconductance
RG
gate resistance
f = 1 MHz
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
VDS = 15 V; ID = 3.2 A; VGS = 10 V;
Tj = 25 °C
QGD
gate-drain charge
Ciss
input capacitance
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Coss
output capacitance
Tj = 25 °C
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 15 V; ID = 3.2 A; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 0.9 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
30
-
-
V
1
1.4 2.5 V
-
-
1
µA
-
-
10
µA
-
-
-10 µA
-
-
1
µA
-
-
-1
µA
-
44
67
mΩ
-
71
107 mΩ
-
56
79
mΩ
-
26
-
S
-
1
-
Ω
-
6
11
nC
-
0.7 -
nC
-
0.9 -
nC
-
295 -
pF
-
40
-
pF
-
31
-
pF
-
3
-
ns
-
12
-
ns
-
11
-
ns
-
3
-
ns
-
0.8 1.2 V
PMXB65ENE
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
6 / 15
Share Link: 