PMXB56EN Просмотр технического описания (PDF) - NXP Semiconductors.
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PMXB56EN Datasheet PDF : 16 Pages
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NXP Semiconductors
PMXB56EN
30 V, N-channel Trench MOSFET
12
ID
(A)
8
5.0 V
aaa-009041
3.5 V
3.2 V
3.0 V
10-2
ID
(A)
10-3
10-4
aaa-009043
min
typ
max
4
10-5
2.6 V
2.8 V
VGS = 2.5 V
0
0
1
2
2.7 V
3
4
VDS (V)
Tj = 25 °C
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
10-6
0
0.5
1.0
1.5
2.0
2.5
VGS (V)
Tj = 25 °C; VDS = 5 V
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
300
2.5 V
RDSon
(mΩ)
2.8 V
3.1 V
aaa-009044
3.5 V
300
RDSon
(mΩ)
aaa-009045
200
200
100
4.5 V
100
Tj = 150 °C
VGS = 10 V
Tj = 25 °C
0
0
4
8
12
ID (A)
Tj = 25 °C
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
0
0
2
4
6
8
10
VGS (V)
ID = 3.2 A
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMXB56EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 January 2017
© NXP Semiconductors N.V. 2017. All rights reserved
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