PMXB56EN(2013) Просмотр технического описания (PDF) - NXP Semiconductors.
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PMXB56EN Datasheet PDF : 15 Pages
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NXP Semiconductors
PMXB56EN
30 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 3.2 A; Tj = 25 °C
VGS = 10 V; ID = 2.8 A; Tj = 150 °C
VGS = 4.5 V; ID = 3.2 A; Tj = 25 °C
gfs
forward
VDS = 10 V; ID = 3.2 A; Tj = 25 °C
transconductance
RG
gate resistance
f = 1 MHz; Tj = 25 °C
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
VDS = 15 V; ID = 3.2 A; VGS = 10 V;
Tj = 25 °C
QGD
gate-drain charge
Ciss
input capacitance
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Coss
output capacitance
Tj = 25 °C
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 15 V; ID = 3.2 A; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 1 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
30
-
-
V
1
1.5 2
V
-
-
1
µA
-
-
100 nA
-
-
-100 nA
-
49
55
mΩ
-
77
87
mΩ
-
56
65
mΩ
-
5
-
S
-
7
-
Ω
-
3.6 6.3 nC
-
0.5 -
nC
-
0.4 -
nC
-
209 -
pF
-
50
-
pF
-
17
-
pF
-
3
-
ns
-
12
-
ns
-
11
-
ns
-
2
-
ns
-
0.7 1.2 V
PMXB56EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 September 2013
© NXP N.V. 2013. All rights reserved
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