TGA1135B-SCC Просмотр технического описания (PDF) - TriQuint Semiconductor
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TGA1135B-SCC Datasheet PDF : 10 Pages
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TABLE I
MAXIMUM RATINGS
SYMBOL
V+
I+
I-
PIN
PD
TCH
TM
TSTG
PARAMETER 4/
POSITIVE SUPPLY VOLTAGE
POSITIVE SUPPLY CURRENT
NEGATIVE SUPPLY CURRENT
INPUT CONTINUOUS WAVE POWER
POWER DISSIPATION
OPERATING CHANNEL TEMPERATURE
MOUNTING TEMPERATURE
(30 SECONDS)
STORAGE TEMPERATURE
Product Datasheet
February 14, 2008
TGA1135B-SCC
VALUE
13 V
720 mA
28.2 mA
23 dBm
9.4 W
150 0C
320 0C
-65 to 150 0C
NOTES
1/
2/ 3/
1/ Total current for all stages.
2/ These ratings apply to each individual FET.
3/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it
is recommended that junction temperatures be maintained at the lowest possible levels.
4/ These ratings represent the maximum operable values for the device.
NOTES SYMBOL
IDSS1
GM1
1/
|VP1|
1/
|VP2|
1/
|VP3-6|
1/
|VBVGD1|
1/
|VBVGS1|
TABLE II
DC SPECIFICATIONS (100%)
(TA = 25 °C + 5 °C)
TEST CONDITIONS 2/
STD
STD
STD
STD
STD
STD
STD
LIMITS
MIN
MAX
60
282
132
318
0.5
1.5
0.5
1.5
0.5
1.5
13
30
13
30
UNITS
mA
mS
V
V
V
V
V
1/ VP, VBVGD, and VBVGS are negative.
2/ The measurement conditions are subject to change at the manufacture’s discretion (with appropriate
notification to the buyer).
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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