MHV5IC1810NR2 Просмотр технического описания (PDF) - Freescale Semiconductor
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MHV5IC1810NR2 Datasheet PDF : 16 Pages
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TYPICAL CHARACTERISTICS — 1930 - 1990 MHz
47
P3dB = 42.5 dBm (17.78 W)
45
P1dB = 42 dBm (15.85 W)
43
41
Ideal
Actual
39
VDD = 28 Vdc
37
IDQ1 = 120 mA, IDQ2 = 90 mA
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 1960 MHz
35
−2
0
2
4
6
8
10
Pin, INPUT POWER (dBm)
Figure 9. Pulse CW Output Power versus Input
Power
36
60
VDD = 28 Vdc, IDQ1 = 120 mA
IDQ2 = 90 mA, f = 1960 MHz
34
−30_C
25_C
50
TC = −30_C
Gps
32
85_C
40
25_C
30
30
85_C
28
20
26
PAE
10
24
0
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Power Added
Efficiency versus CW Output Power
34
32
30
28
26
28 V
32 V
24
22
20
24 V
18
16
14
16 V
20 V
IDQ1 = 120 mA
IDQ2 = 90 mA
12
10
VDD = 12 V
f = 1960 MHz
0 2 4 6 8 10 12 14 16 18 20 22 24
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
33 VDD = 28 Vdc, Pout = 1 W Avg., IDQ1 = 120 mA, IDQ2 = 90 mA
Two−Tone Measurements, Center Frequency = 1960 MHz
32
31
TC = −30_C
30
29
25_C
28
27
26
1800
85_C
1850
1900
1950
2000
f, FREQUENCY (MHz)
Figure 12. Power Gain versus Frequency
RF Device Data
Freescale Semiconductor
MHV5IC1810NR2
7
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