MHV5IC1810NR2 Просмотр технического описания (PDF) - Freescale Semiconductor
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MHV5IC1810NR2 Datasheet PDF : 16 Pages
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TYPICAL CHARACTERISTICS — 1930 - 1990 MHz
35
−10
34
IRL −15
33
VDD = 28 Vdc, Pout = 5 W (Avg.)
32 IDQ1 = 120 mA, IDQ2 = 90 mA
100 kHz Tone Spacing
31
30
29
−20
PAE −25
Gps −30
−35
IMD
−40
28
−45
27
−50
1900
1920
1940
1960
1980
2000
f, FREQUENCY (MHz)
Figure 5. Two - Tone Wideband Performance
@ Pout = 5 Watts (Avg.)
35
0
Gps
30
−10
25
VDD = 28 Vdc, Pout = 20 dBm (Avg.)
20 IDQ1 = 120 mA, IDQ2 = 90 mA
100 kHz Tone Spacing
15
IRL −20
−30
−40
10
−50
IMD
5
−60
PAE
0
−70
1900
1920
1940
1960
1980
2000
f, FREQUENCY (MHz)
Figure 6. Two - Tone Wideband Performance
@ Pout = 20 dBm (Avg.)
32
IDQ1 = 120 mA
31
IDQ2 = 140 mA
IDQ1 = 120 mA
30
IDQ2 = 115 mA
29
28 IDQ1 = 60 mA IDQ1 = 120 mA
IDQ2 = 90 mA IDQ2 = 45 mA
27
VDD = 28 Vdc
26 Center Frequency = 1960 MHz
100 kHz Tone Spacing
25
1
10
IDQ1 = 120 mA
IDQ2 = 90 mA
IDQ1 = 120 mA
IDQ2 = 65 mA
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Two - Tone Power Gain versus
Output Power
−10
VDD = 28 Vdc
−20 IDQ1 = 120 mA, IDQ2 = 90 mA
f = 1960 MHz, 100 kHz Tone Spacing
−30
−40
−50
3rd Order
5th Order
7th Order
−60
−70
−80
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Intermodulation Distortion Products
versus Output Power
MHV5IC1810NR2
6
RF Device Data
Freescale Semiconductor
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