MHV5IC1810NR2 Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MHV5IC1810NR2

RF LDMOS Wideband Integrated Power Amplifier

Freescale Semiconductor 

TYPICAL CHARACTERISTICS — 1805 - 1880 MHz

12

60

TC = 85_C 25_C

10

EVM

50

8

6

PAE

4

2

40

−30_C

30

VDD = 28 Vdc

IDQ1 = 105 mA

20

IDQ2 = 90 mA

f = 1840 MHz

EDGE Modulation 10

0

0

1

10

100

Pout, OUTPUT POWER (WATTS) AVG.

Figure 19. Spectral Regrowth at 400 and 600 kHz

versus Output Power

−45

−50

25_C

−55

−60

−65 SR @ 400 kHz TC = 85_C

25_C

−70

−75

SR @ 600 kHz

−80

−85

0.1

−30_C

85_C

−30_C

1

VDD = 28 Vdc

IDQ1 = 105 mA

IDQ2 = 90 mA

f = 1840 MHz

EDGE Modulation

10

100

Pout, OUTPUT POWER (WATTS) AVG.

Figure 20. Spectral Regrowth at 400 and 600 kHz

versus Output Power

RF Device Data

Freescale Semiconductor

MHV5IC1810NR2

11

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