MBRF2545CT Просмотр технического описания (PDF) - ON Semiconductor
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MBRF2545CT Datasheet PDF : 4 Pages
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MBRF2545CT
Preferred Device
SWITCHMODE™
Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier
principle in a large area metal- to- silicon power diode.
State-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very low-voltage, high-frequency switching power
supplies, free wheeling diodes and polarity protection diodes.
Features
•ăHighly Stable Oxide Passivated Junction
•ăVery Low Forward Voltage Drop
•ăMatched Dual Die Construction
•ăHigh Junction Temperature Capability
•ăHigh dv/dt Capability
•ăExcellent Ability to Withstand Reverse Avalanche Energy Transients
•ăGuardring for Stress Protection
•ăEpoxy Meets UL 94 V-0 @ 0.125 in
•ăElectrically Isolated
•ăNo Isolation Hardware Required
•ăPb-Free Package is Available*
Mechanical Characteristics:
•ăCase: Epoxy, Molded
•ăWeight: 1.9 Grams (Approximately)
•ăFinish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•ăLead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
25 AMPERES, 45 VOLTS
1
2
3
MARKING
DIAGRAM
AYWW
ISOLATED TO-220
CASE 221D
B2545G
AKA
1
STYLE 3
A
= Assembly Location
Y
= Year
WW = Work Week
B2545 = Device Code
G = Pb-Free Package
AKA = Diode Polarity
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©Ă Semiconductor Components Industries, LLC, 2007
1
June, 2007 - Rev. 8
ORDERING INFORMATION
Device
Package
Shipping
MBRF2545CT
TO-220
50 Units/Rail
MBRF2545CTG TO-220
(Pb-Free)
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MBRF2545CT/D
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