MBR10100CTF-E1 Просмотр технического описания (PDF) - BCD Semiconductor
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MBR10100CTF-E1 Datasheet PDF : 8 Pages
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HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Typical Performance Characteristics
Data Sheet
MBR10100C
100
10
TJ=1500C
1
0.1
TJ=1250C
TJ=25C
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage(V)
Figure 4. Typical Forward Voltage Per Diode
10000
1000
TJ=1500C
100
TJ=1250C
10
1
0.1
TJ=250C
0.01
1E-3
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage(%)
Figure 5. Typical Reverse Current Per Diode
10
9
8
7
6
5
4
3
2
1
0
100 105 110 115 120 125 130 135 140 145 150 155
Case Temperature (°C)
Figure6. Average Forward Current vs.
Case Temperature (Per Diode)
Apr. 2009 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
5
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