MBR10100CTF-G1 Просмотр технического описания (PDF) - BCD Semiconductor

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производитель

MBR10100CTF-G1

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

BCD Semiconductor 

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10100C

Recommended Operating Conditions

Parameter

Symbol Condition

θJC

Maximum Thermal Resistance

θJA

Junction to Case

Junction to

Ambient

Value

TO-220-3/

TO-220-3 (2)

3.0

TO-220F-3

4.5

TO-220-3/

TO-220-3 (2)

60

TO-220F-3

60

Unit

°C/W

Electrical Characteristics

Parameter

Maximum Instantaneous Forward

Voltage Drop (Note 3)

Symbol

VF

Conditions

IF=5A, TC=25°C

IF=5A, TC=125°C

IF=10 A, TC=25°C

IF=10A, TC=125°C

Rated DC Voltage,

Maximum Instantaneous Reverse

Current (Note 3)

IR

TC=125°C

Rated DC Voltage,

TC=25°C

Note 3: Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.

Value

0.85

0.75

0.95

0.85

6.0

0.1

Units

V

mA

Apr. 2009 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

4

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