WS1M8-XCX Просмотр технического описания (PDF) - White Electronic Designs => Micro Semi
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WS1M8-XCX Datasheet PDF : 6 Pages
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WS1M8-XXX
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Operating Temperature
TA
-55
Storage Temperature
TSTG
-65
Signal Voltage Relative to GND VG
-0.5
Junction Temperature
TJ
Supply Voltage
VCC
-0.5
Max Unit
+125
°C
+150
°C
Vcc+0.5
V
150
°C
7.0
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
VCC
VIH
VIL
TA
Min
Max
Unit
4.5
5.5
V
2.2
VCC + 0.3
V
-0.3
+0.8
V
-55
+125
°C
TRUTH TABLE
CS
OE
WE
Mode
Data I/O
Power
H
X
X
Standby
High Z
Standby
L
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
H Out Disable
High Z
Active
NOTE: OE is internally tied to the GND and not accessible on the WS1M8-XCX.
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Condition
Input capacitance
CIN
VIN = 0V, f = 1.0MHz
Output capicitance
COUT
VOUT = 0V, f = 1.0MHz
This parameter is guaranteed by design but not tested.
Max Unit
20 pF
20 pF
DC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter
Sym
Conditions
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
Output Leakage Current
ILO1 CS = VIH, OE = VIH, VOUT = GND to VCC
Operating Supply Current
ICC1 CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
Standby Current
ISB1 CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
Output Low Voltage
VOL IOL = 8mA
Output High Voltage
VOH IOH = -4.0mA
NOTE: DC test conditions: VIH = VCC -0.3V , VIL = 0.3V
1. OE is internally tied to the GND and not accessible on the WS1M8-XCX.
Min
Max
10
10
180
40
0.4
2.4
LOW POWER DATA RETENTION CHARACTERISTICS (WS1M8L-XXX ONLY)
(TA = -55°C to +125°C)
Parameter
Data Retention Supply Voltage
Data Retention Current
Symbol
VDR
ICCDR1
Conditions
CS ≥ VCC -0.2V
VCC = 3V
Min
Typ
Max
2.0
5.5
3.0
18.0*
Units
µA
µA
mA
mA
V
V
Units
V
mA
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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