BSM300GA170DN2E3166 Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге

Компоненты Описание

производитель

BSM300GA170DN2E3166

IGBT Power Module

Infineon Technologies 

BSM300GA170DN2 E3166

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time

td(on)

VCC = 1200 V, VGE = 15 V, IC = 300 A

RGon = 5.6 Ω

-

Rise time

tr

VCC = 1200 V, VGE = 15 V, IC = 300 A

RGon = 5.6 Ω

-

Turn-off delay time

td(off)

VCC = 1200 V, VGE = -15 V, IC = 300 A

RGoff = 5.6 Ω

-

Fall time

tf

VCC = 1200 V, VGE = -15 V, IC = 300 A

RGoff = 5.6 Ω

-

600

200

1280

110

ns

1200

400

1900

160

Free-Wheel Diode

Diode forward voltage

VF

IF = 300 A, VGE = 0 V, Tj = 25 °C

-

IF = 300 A, VGE = 0 V, Tj = 125 °C

-

Reverse recovery time

trr

IF = 300 A, VR = -1200 V, VGE = 0 V

diF/dt = -1500 A/µs, Tj = 125 °C

-

Reverse recovery charge

Qrr

IF = 300 A, VR = -1200 V, VGE = 0 V

diF/dt = -1500 A/µs

Tj = 25 °C

-

Tj = 125 °C

-

V

2

2.5

1.8

-

µs

1

-

µC

28

-

100

-

Semiconductor Group

3

Jul-31-1996

Share Link: