DIM400DCM17-A000(2002) Просмотр технического описания (PDF) - Dynex Semiconductor
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DIM400DCM17-A000 Datasheet PDF : 11 Pages
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DIM400DCM17-A000
TYPICAL CHARACTERISTICS
900
Common emitter.
Tcase = 25˚C
800 Vce is measured at power busbars
and not the auxiliary terminals
700
600
500
400
300
200
100
0
0
VGE = 20V
15V
12V
10V
0.5 1 1.5 2 2.5 3 3.5 4
Collector-emitter voltage, Vce - (V)
4.5 5
Fig. 3 Typical output characteristics
900
Common emitter.
800
Tcase = 125˚C
Vce is measured at power busbars
and not the auxiliary terminals
700
600
500
400
300
200
100
0
0
VGE = 20V
15V
12V
10V
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
200
Conditions:
Vce = 900V
175 Tc = 125°C
Rg = 4.7Ω
150
125
100
75
50
25
Eoff
Eon
Erec
0
0
100
200
300
400
500
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
400
Conditions:
Vce = 900V
IC = 400A
Tc = 125°C
300
200
100
Eoff
Eon
Erec
0
0
4
8
12
16
Gate Resistance, Rg - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/11
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