KM416C1000B-L Просмотр технического описания (PDF) - Samsung
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производитель
KM416C1000B-L Datasheet PDF : 8 Pages
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KM416C1000B, KM416C1200B
KM416V1000B, KM416V1200B
CAPACITANCE (TA=25¡É, VCC=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Input capacitance [A0 ~ A11]
CIN1
-
Input capacitance [RAS, UCAS, LCAS, W, OE]
CIN2
-
Output capacitance [DQ0 - DQ15]
CDQ
-
CMOS DRAM
Max
5
7
7
Units
pF
pF
pF
AC CHARACTERISTICS (0¡É¡ÂTA¡Â70¡É, See note 1,2)
Test condition (5V device) : VCC=5.0V¡¾10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Test condition (3.3V device) : VCC=3.3V¡¾0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-5
Min Max
-6
Min Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
tRC
tRWC
tRAC
tCAC
tAA
tCLZ
tOFF
tT
tRP
tRAS
tRSH
tCSH
tCAS
tRCD
tRAD
tCRP
tASR
tRAH
tASC
tCAH
tRAL
tRCS
tRCH
tRRH
tWCH
tWP
tRWL
tCWL
90
110
133
155
50
60
15
15
25
30
0
0
0
13
0
15
3
50
3
50
30
40
50
10K
60
10K
13
15
50
60
13
10K
15
10K
20
37
20
45
15
25
15
30
5
5
0
0
10
10
0
0
10
10
25
30
0
0
0
0
0
0
10
10
10
10
15
15
13
15
-7
Min Max
130
185
70
20
35
0
0
20
3
50
50
70
10K
20
70
20
10K
20
50
15
35
5
0
10
0
15
35
0
0
0
15
15
20
20
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
3,4,9
3,4
3,9
3
5
2
4
9
10
10
7
7
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