KDS4470 Просмотр технического описания (PDF) - TY Semiconductor
Номер в каталоге
Компоненты Описание
производитель
KDS4470 Datasheet PDF : 2 Pages
| |||
SSMMDD TTyyppee
MOSFIECICT
Product specification
KDS4470
Electrical Characteristics Ta = 25
Parameter
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Symbol
Testconditons
Min Typ Max Unit
EAS Single Pulse,VDD=40V,ID=12.5A( Not 2)
370 mJ
IAS
( Not 2)
12.5 A
BVDSS VGS = 0 V, ID = 250 A
40
V
ID = 250 A, Referenced to 25
42
mV/
IDSS
IGSSF
IGSSR
VGS(th)
VDS = 32 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
VDS = VGS, ID = 250 A
1
A
100 nA
-100 nA
2 3.9 5
V
ID = 250 A, Referenced to 25
-8
mV/
RDS(on)
VGS = 10 V, ID = 12.5 A
VGS = 10 V, ID =12.5 A,TJ = 125
6
9
m
9 14
ID(on) VGS = 10 V, VDS = 5 V
25
A
gFS
VDS = 10V, ID = 12.5 A
45
S
Ciss
2659
pF
Coss
VDS = 20 V, VGS = 0 V,f = 1.0 MHz
605
pF
Crss
298
pF
td(on)
14 25 ns
tr
td(off)
VDD = 20 V, ID = 1 A,VGS = 10 V, RGEN =
6 (Note 2)
12 22 ns
37 59 ns
tf
29 46 ns
Qg
VDS = 20 V, ID = 12.5 A,VGS = 10 V
Qgs
(Note 2)
Qgd
45 63 nC
27
nC
5
nC
IS
2.1 A
VSD
VGS = 0 V, IS = 2.1 A (Not 2)
trr
IF = 12.5 A, diF/dt = 100 A/ s
Qrr
0.7 1.2 V
33
nS
39
nC
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
2 of 2
Share Link: 