DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

K246 Просмотр технического описания (PDF) - NEC => Renesas Technology

Номер в каталоге
Компоненты Описание
производитель
K246 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK2461
1 000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-a) = 62.5 ˚C/W
10
1
Rth(ch-c) = 3.57 ˚C/W
0.1
0.01
0.001
10 µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
10
100 1 000
1000
100
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
TA =–25 ˚C
25 ˚C
75 ˚C
125 ˚C
VDS=10 V
Pulsed
10
1
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
160
Pulsed
120
80
VGS = 4 V
VGS = 10 V
40
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
140
Pulsed
120
100
80
ID = 8.0 A
60
40
20
0
10
20
30
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
2.0
ID = 1 mA
1.5
1.0
0.5
0
1
10
100
ID - Drain Current - A
0
–50
0
50
100 150
Tch - Channel Temperature - ˚C
4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]