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Компоненты Описание
6R199P(2011) Просмотр технического описания (PDF) - Infineon Technologies
Номер в каталоге
Компоненты Описание
производитель
6R199P
(Rev.:2011)
CoolMOS® Power Transistor
Infineon Technologies
6R199P Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
9 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=9.9 A pulsed
parameter:
V
DD
10
9
120 V
8
7
400 V
6
5
4
3
2
1
0
0
10
20
30
Q
gate
[nC]
11 Avalanche energy
E
AS
=f(
T
j
);
I
D
=6.6 A;
V
DD
=50 V
500
IPB60R199CP
10 Forward characteristics of reverse diode
I
F
=f(
V
SD
)
parameter:
T
j
10
2
25 °C, 98%
150 °C, 98%
25 °C
10
1
150 °C
10
0
10
-1
40
0
0.5
1
1.5
2
V
SD
[V]
12 Drain-source breakdown voltage
V
BR(DSS)
=f(
T
j
);
I
D
=0.25 mA
700
400
660
300
620
200
580
100
0
20
Rev. 2.
2
60
100
140
T
j
[°C]
540
180
-60
-20
20
60
100 140 180
T
j
[°C]
page 6
20
11
-
12
-
20
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