H8050 Просмотр технического описания (PDF) - TY Semiconductor
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производитель
H8050 Datasheet PDF : 2 Pages
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SMD Type
■ Features
● Collector Power Dissipation: PC=0.5W
● Collector Current: IC=1.5A
Transistors
Product specification
H8050
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
Unit: mm
1.50+0.1
-0.1
123
0.48+0.1
-0.1
0.53+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
40
V
VCEO
25
V
VEBO
5
V
IC
1.5
A
PC
0.5
W
Tj
150
℃
Tstg
-55 to +150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Base-emitter positive favor voltage
output capacitance
Transition frequency
Symbol
Testconditons
VCBO IC= 100μA, IE=0
VCEO IC= 0.1mA, IB=0
VEBO IE= 100μA, IC=0
ICBO VCB= 40 V,IE=0
ICEO VCE= 20V, IB=0
IEBO VEB= 5V, IC=0
VCE= 1V, IC= 100mA
hFE
VCE= 1V, IC= 800mA
VCE(sat) IC=800mA, IB= 80mA
VBE(sat) IC=800mA, IB=80mA
VBE(on) Ic=1V,VCE=10mA
VBEF IB=1A
Cob VCB=10V,IE=0,f=1MHz
fT VCE= 10V, IC=50mA
■ hFE Classification
Rank
hFE
B
85 ～ 160
C
120～200
D
160～300
D3
300～400
1. Base
2. Collector
3. Emiitter
Min Typ Max Unit
40
V
25
V
5
V
0.1 μA
0.1 μA
0.1 μA
85
400
40
0.5 V
1.2 V
1
V
1.55 V
15 pF
100
MHz
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