FSEZ1216 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FSEZ1216 Datasheet PDF : 16 Pages
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Electrical Characteristics
VDD=15V and TA=25°C unless otherwise specified.
Symbol
Parameter
Conditions
Min. Typ. Max. Units
Voltage-Error-Amplifier Section
VVR
Reference Voltage
VN
Green Mode Starting Voltage on
COMV Pin
fS=fOSC-2KHz, VVS=2.3V
VG
Green Mode Ending Voltage on
COMV Pin
fS=1KHz
IV-SINK Output Sink Current
VVS=3V, VCOMV=2.5V
IV-SOURCE Output Source Current
VVS=2V, VCOMV=2.5V
VV-HGH Output High Voltage
VVS=2.3V
Current-Error-Amplifier Section
2.475 2.500 2.525 V
2.8
V
0.8
V
90
μA
90
μA
4.5
V
VIR
Reference Voltage
II-SINK
Output Sink Current
II-SOURCE Output Source Current
VI-HGH Output High Voltage
Cable Compensation Section
VCS=3V, VCOMI=2.5V
VCS=0V, VCOMI=2.5V
VCS=0V
2.475 2.500 2.525 V
55
μA
55
μA
4.5
V
VCOMR
Variation Test Voltage on COMR
Pin for Cable Compensation
RCOMR=100k
0.735
V
Internal MOSFET Section
DCYMAX Maximum Duty Cycle
75
%
BVDSS
Drain-Source Breakdown
Voltage
ID=250μA, VGS=0V
600
V
∆BVDSS /∆TJ
Breakdown Voltage
Temperature Coefficient
ID=250μA, Referenced to 25°C
0.6
V/°C
IS
Maximum Continuous Drain-
Source Diode Forward Current
1
A
ISM
Maximum Pulsed Drain-Source
Diode Forward Current
4
A
RDS(ON)
Static Drain-Source On-
Resistance
ID=0.5A, VGS=10V
9.3 11.5
Ω
IDSS
tD-ON
Drain-Source Leakage Current
Turn-On Delay Time(2,3)
VDS=600V, VGS=0V, TC=25°C
VDS=480V, VGS=0V, TC=100°C
VDS=300V, ID=1.1A, RG=25Ω
1
μA
10
7
24
ns
tr
Rise Time
21
52
ns
tD-OFF
Turn-Off Delay Time
13
36
ns
tf
Fall Time
27
64
ns
CISS
Input Capacitance
VGS=0V, VDS=25V, fS=1MHz
130 170
pF
COSS
Output Capacitance
19
25
pF
Over-Temperature-Protection Section
TOTP
Threshold Temperature for
OTP(4)
+140
°C
Notes:
2. Pulse test: pulse width ≦ 300µs, duty cycle ≦ 2%.
3. Essentially independent of operating temperature.
4. When over-temperature protection is activated, the power system enters latch mode and output is disabled.
© 2009 Fairchild Semiconductor Corporation
FSEZ1216 • Rev. 1.0.1
6
www.fairchildsemi.com
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