FDS8960C Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FDS8960C Datasheet PDF : 8 Pages
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Typical Characteristics: Q2 (P-Channel)
20
VGS = -10V
16
-6.0V
-4.5V
12
8
-3.5V
4
-3.0V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. On-Region Characteristics.
3.4
3.2
3 VGS = - 3.5V
2.8
2.6
2.4
2.2
2
-4.0V
1.8
-4.5V
1.6
-5.0V
1.4
-6.0V
1.2
1
0.8
0
5
10
15
-ID, DRAIN CURRENT (A)
-10V
20
Figure 14. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.5
ID = -5A
VGS = - 10V
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 15. On-Resistance Variation with
Temperature.
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
2
ID = -2.5A
TA = 125oC
TA = 25oC
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 16. On-Resistance Variation with
Gate-to-Source Voltage.
20
VDS = -5V
16
12
8
TA = -55oC
25oC
125oC
4
0
1.5
2
2.5
3
3.5
4
4.5
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. Transfer Characteristics.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 18. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8960C Rev C1(W)
www.fairchildsemi.com
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