FDS8960C Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS8960C Datasheet PDF : 8 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ
Drain-Source Avalanche Ratings
EAS
Drain-Source Avalanche
VDD = 35 V, ID = 7 A, L = 1 mH Q1
Energy (Single Pulse)
VDD = –35 V, ID =–5 A, L = 1 mH Q2
IAS
Drain-Source Avalanche
Current
Q1
7
Q2
–5
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
ΔBVDSS
ΔTJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSSF
Gate-Body Leakage, Forward
IGSSR
Gate-Body Leakage, Reverse
IGSSR
Gate-Body Leakage, Forward
IGSSF
Gate-Body Leakage, Reverse
VGS = 0 V,
ID = 250 μA
VGS = 0 V,
ID = –250 μA
ID = 250 μA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 28 V,
VGS = 0 V
VDS = –28 V, VGS = 0 V
VGS = 20 V,
VDS = 0 V
VGS = –20 V, VDS = 0 V
VGS = 25 V,
VDS = 0 V
VGS = –25 V, VDS = 0 V
Q1 35
Q2 –35
Q1
31
Q2
–40
Q1
Q2
Q1
Q2
On Characteristics (Note 2)
VGS(th)
ΔVGS(th)
ΔTJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
VDS = VGS,
ID = 250 μA
VDS = VGS,
ID = –250 µA
ID = 250 μA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VGS = 10 V,
ID = 7 A
VGS = 4.5 V,
ID = 6 A
VGS = 10 V, ID = 7 A, TJ = 125°C
Q1 1
2
Q2 –1 –1.8
Q1
–5
Q2
4
Q1
20
25
29
VGS = –10 V,
ID = –5 A
Q2
44
VGS = –4.5 V,
ID = –4 A
70
VGS = –10 V, ID = –5 A, TJ = 125°C
61
gFS
Forward Transconductance VDS = 5 V,
ID = 7 A
Q1
23
VDS = –5 V,
ID =–5 A
Q2
9
Dynamic Characteristics
Ciss
Input Capacitance
Q1
Q1
570
VDS = 15 V, VGS = 0 V, f = 1.0 MHz
Q2
540
Coss
Output Capacitance
Q1
126
Q2
Q2
113
Crss
Reverse Transfer Capacitance VDS = –15 V, VGS = 0 V, f = 1.0 MHz Q1
52
Q2
60
RG
Gate Resistance
f = 1.0 MHz
Q1
2
Q2
6
Max Units
24.5 mJ
12.5 mJ
A
V
mV/°C
1
μA
–1
100 nA
–100 nA
100 nA
–100 nA
3
V
–3
mV/°C
24
mΩ
32
37
53
87
79
S
pF
pF
pF
Ω
FDS8960C Rev C1(W)
www.fairchildsemi.com
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