FDD3510H Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDD3510H Datasheet PDF : 10 Pages
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Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
20
VGS = 10V
15
VGS = 6V
VGS = 4.5V
PULSE DURATION = Xµs
DUTY CYCLE = X%MAX
10
VGS = 4V
5
VGS = 3.5V
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
4.0
VGS = 3.5V
3.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
3.0
VGS = 4V
2.5
VGS = 4.5V
2.0
1.5
VGS = 6V
1.0
0.5
0
5
10
ID, DRAIN CURRENT(A)
VGS = 10V
15
20
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.2
2.0
ID = 4.3A
VGS = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
300
ID = 4.3A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
200
TJ = 125oC
100
TJ = 25oC
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
15
VDS = 5V
10
TJ = 150oC
TJ = 25oC
5
TJ = -55oC
0
2
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
20
10 VGS = 0V
1
TJ = 150oC
0.1
0.01
TJ = 25oC
TJ = -55oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDD3510H Rev.C
4
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