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FDD3510H Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге
Компоненты Описание
производитель
FDD3510H
Fairchild
Fairchild Semiconductor Fairchild
FDD3510H Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID =250µA, VGS = 0V
ID = -250µA, VGS = 0V
ID = 250µA, referenced to 25°C
ID = -250µA, referenced to 25°C
VDS = 64V, VGS = 0V
VDS = -64V, VGS = 0V
VGS = ±20V, VDS = 0V
Q1 80
Q2 -80
V
Q1
84
Q2
-67
mV/°C
Q1
Q2
1
-1
µA
Q1
±100 nA
Q2
±100 nA
On Characteristics
VGS(th)
VGS(th)
TJ
rDS(on)
gFS
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
VGS = VDS, ID = -250µA
Q1 2.0 2.6
Q2 -1.0 -1.6
Gate to Source Threshold Voltage
ID = 250µA, referenced to 25°C
Q1
-6.7
Temperature Coefficient
ID = -250µA, referenced to 25°C
Q2
4.6
VGS = 10V, ID = 4.3A
64
VGS = 6.0V, ID = 4.1A
Q1
70
Static Drain to Source On Resistance VGS = 10V, ID = 4.3A, TJ = 125°C
121
VGS = -10V, ID = -2.8A
153
VGS = -4.5V, ID = -2.6A
Q2
184
VGS = -10V, ID = -2.8A, TJ = 125°C
259
Forward Transconductance
VDD = 10V, ID = 4.3A
VDD = -5V, ID = -2.8A
Q1
15
Q2
6.8
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
Q1
Q1
600
VDS = 40V, VGS = 0V, f = 1MHZ
Q2
660
Q1
56
Q2
Q2
50
Crss
Reverse Transfer Capacitance
VDS = -40V, VGS = 0V, f = 1MHZ Q1
Q2
27
25
Rg
Gate Resistance
f = 1MHz
Q1
1.7
Q2
7.2
4.0
-3.0
V
mV/°C
80
88
152
m
190
224
322
S
800
880
pF
75
70
pF
41
40
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
Q1
Q1
Q2
VDD = 40V, ID = 4.3A,
Q1
VGS = 10V, RGEN = 6
Q2
Q2
Q1
VDD = -40V, ID = -2.8A,
Q2
VGS = -10V, RGEN = 6
Q1
Q2
Q1
Q1
Q2
VGS = 10V, VDD = 40V, ID = 4.3A
Q1
Q2
Q2
VGS = -10V, VDD = -40V, ID = -2.8A
Q1
Q2
7
6
13
11
ns
2
3
10
10
ns
16
25
29
40
ns
2
5
10
10
ns
13
14
18
20
nC
2.3
1.9
nC
3.2
2.9
nC
FDD3510H Rev.C
2
www.fairchildsemi.com

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