DS24B33 Просмотр технического описания (PDF) - Maxim Integrated

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DS24B33

4Kb 1-Wire EEPROM with 200k Write/Erase Cycles

Maxim Integrated 

4Kb 1-Wire EEPROM with

200k Write/Erase Cycles

ELECTRICAL CHARACTERISTICS (continued)

(TA = -40°C to +85°C.) (Note 1)

Note 20: Write-cycle endurance is degraded as TA increases.

Note 21: Not 100% production tested; guaranteed by reliability monitor sampling.

Note 22: Data retention is degraded as TA increases.

Note 23: Guaranteed by 100% production test at elevated temperature for a shorter time; equivalence of this production test to data

sheet limit at operating temperature range is established by reliability testing.

Note 24: EEPROM writes can become nonfunctional after the data-retention time is exceeded. Long-time storage at elevated tem-

peratures is not recommended; the device can lose its write capability after 10 years at +125°C or 40 years at +85°C.

Pin Configurations

TOP VIEW

+

N.C. 1

N.C. 2

IO 3

DS24B33

GND 4

SO

(208 mils)

8 N.C.

7 N.C.

6 N.C.

5 N.C.

SIDE VIEW

GND 1

IO 2

N.C. 3

TO-92

FRONT VIEW

1

2

3

FRONT VIEW (T&R VERSION)

1

2

3

4 _______________________________________________________________________________________

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