HYB3164400T-60 Просмотр технического описания (PDF) - Siemens AG

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HYB3164400T-60

16M x 4-Bit Dynamic RAM (4k & 8k Refresh)

Siemens AG 

HYB 3164(5)400J/T-50/-60

16M x 4-DRAM

AC Characteristics (cont’d)(note: 6,7,8)

TA = 0 to 70 ˚C,VCC = 3.3 ± 0.3 V

Parameter

Symbol

HYB

3164(5)400

J/T-50

min. max.

CAS to output in low-Z

tCLZ

Output buffer turn-off delay

tOFF

Output buffer turn-off delay from OE tOEZ

Data to OE low delay

tDZO

CAS high to data delay

tCDD

OE high to data delay

tODD

0

–

–

13

–

13

0

–

13

–

13

–

HYB

3164(5)400

J/T-60

min. max.

0

–

–

15

–

15

0

–

15

–

15

–

Unit Note

ns 8

ns 12

ns 12

ns 13

ns 14

ns 14

Write Cycle

Write command hold time

Write command pulse width

Write command setup time

Write command to RAS lead time

Write command to CAS lead time

Data setup time

Data hold time

CAS delay time from Din

tWCH

tWP

tWCS

tRWL

tCWL

tDS

tDH

tDZC

8

–

8

–

0

–

13

–

13

–

0

–

10

–

0

–

10

–

10

–

0

–

15

–

15

–

0

–

10

–

0

–

ns

ns

ns 15

ns

ns

ns 16

ns 16

ns 13

Read-Modify-Write Cycle

Read-write cycle time

tRWC

126 –

RAS to WE delay time

tRWD

68

–

CAS to WE delay time

tCWD

31

–

Column address to WE delay time

tAWD

43

–

OE command hold time

tOEH

13

–

150 –

80

–

35

–

50

–

15

–

ns

ns 15

ns 15

ns 15

ns

Fast Page Mode Cycle

Fast page mode cycle time

tPC

35

–

40

–

ns

CAS precharge time

tCP

10

–

10

–

ns

Access time from CAS precharge

tCPA

–

30

–

35

ns 8

RAS pulse width

tRAS

50

200k 60

200k ns

Semiconductor Group

70

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