BU90R104 Просмотр технического описания (PDF) - ROHM Semiconductor
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BU90R104 Datasheet PDF : 22 Pages
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BU90R104
●AC characteristics
Table 3. Switching Characteristics (VDD=2.3~3.6V,Ta=-40~85℃)
Parameter
Symbol
Min
CLKOUT Period
tRCP
8.93
CLKOUT "H" Time
tRCH
-
CLKOUT "L" Time
tRCL
-
LVCMOS Data Setup to CLKOUT
tRS
0.5tRCP-1.4
LVCMOS Data Hold from CLKOUT
tRH
0.23tRCP-1.0
LVCMOS Data Rise time
tTLH
-
LVCMOS Data Fall time
tTHL
-
Input Data Position 0
Input Data Position 1
Input Data Position 2
Input Data Position 3
Input Data Position 4
Input Data Position 5
Input Data Position 6
Phase Locked Loop Set Time
tRIP1
tRIP0
tRIP6
tRIP5
tRIP4
tRIP3
tRIP2
tRPLL
-0.25
tRCIP -0.25
7
2 tRCIP -0.25
7
3 tRCIP -0.25
7
4 tRCIP -0.25
7
5 tRCIP -0.25
7
6 tRCIP -0.25
7
-
Clock Input Period
tRCIP
8.93
Limits
Typ
-
0.5tRCP-1.0
0.5tRCP-1.0
-
-
1.0
1.0
0.0
tRCIP
7
2 tRCIP
7
3 tRCIP
7
4 tRCIP
7
5 tRCIP
7
6 tRCIP
7
-
-
Datasheet
Unit
Max
125
ns
-
ns
-
ns
-
ns
-
ns
2.0
ns
2.0
ns
+0.25
ns
tRCIP +0.25
ns
7
2 tRCIP +0.25
ns
7
3 tRCIP +0.25
ns
7
4 tRCIP +0.25
ns
7
5 tRCIP +0.25
ns
7
6 tRCIP +0.25
ns
7
10.0
ms
125
ns
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TSZ22111・15・001
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TSZ02201-0L2L0H500030-1-2
27.Feb.2015 Rev.002
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