BU90R104 Просмотр технического описания (PDF) - ROHM Semiconductor
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BU90R104 Datasheet PDF : 22 Pages
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BU90R104
Datasheet
●DC characteristics
Table 1. LVCMOS DC Specifications (VDD=2.3~3.6V,Ta=-40~+85℃)
Parameter
Symbol
Min
Limits
Typ
Unit
Max
High Level Input Voltage
VIH
VDD×0.8
-
VDD
V
Conditions
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Current
VIL
0.0
VOH
VDD-0.5
VOL
0.0
IINC
-
-
VDD×0.2 V
-
VDD
V
IOH=-4mA (data)
IOH=-8mA (clock)
-
0.4
V
IOL=4mA (data)
IOL=8mA (clock)
-
±10
µA 0V≦VIN≦VDD
Table 2. LVDS Receiver DC Specifications (VDD=2.3~3.6V,Ta=-40~+85℃)
Parameter
Limits
Symbol
Min
Typ
Max
Differential Input High threshold
VTH
-
-
100
Differential Input Low threshold
VTL
-100
-
-
Input Current
IINL
-
-
±25
Common mode Voltage
VOC
0.8
1.2
1.6
Differential Input Voltage
|VID|
100
-
600
Unit
Conditions
mV VOC=1.2V
mV VOC=1.2V
µA
VIN=2.4V / 0V
VDD=3.6V
V VID =200mV
mV
-
Figure 3. LVDS Receiver DC Specifications
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TSZ22111・15・001
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TSZ02201-0L2L0H500030-1-2
27.Feb.2015 Rev.002
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