BD9778F-TR Просмотр технического описания (PDF) - ROHM Semiconductor
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BD9778F-TR Datasheet PDF : 17 Pages
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BD9778F, BD9778HFP, BD9001F, BD9781HFP
Technical Note
BD9001F (Unless otherwise specified, Ta=-40˚C ~ +95˚C,VIN=13.2V, VEN=5V)
Parameter
Standby circuit current
Circuit current
Symbol
ISTB
IQ
Limits
Min. Typ. Max.
Unit
Condition
-
4 10 µA VEN=0V,Ta=25˚C
-
3 4.2 mA IO=0A
[SW block]
POWER MOS FET ON resistance
RON
- 0.6 1.2 Ω ISW=50mA
Operating output current of overcurrent protection IOLIMIT
2.5 4
-
A * Design assurance
[Error Amp block]
Reference voltage 1
Reference voltage 2
Reference voltage input regulation
Input bias current
Maximum FB voltage
Minimum FB voltage
VREF1
VREF2
∆VREF
IB
VFBH
VFBL
0.98 1.00 1.02 V VFB=VINV,Ta=25˚C
0.96 1.00 1.04 V VFB=VINV
- 0.5 - % VIN=7 ~ 48V
-1 -
- µA VINV=1.1V
2.4 2.5 - V VINV=0.5V
- 0.05 0.10 V VINV=1.5V
FB sink current
IFBSINK -5.0 -3.0 -0.5 mA VFB=1.5V,VINV=1.5V
FB source current
Soft start time
[Oscillator block]
IFBSOURCE 70 120 170 µA VFB=1.5V,VINV=0.5V
Tss
-
5
- ms * Design assurance
Oscillation frequency
Frequency input regulation
FOSC
∆FOSC
82 102 122 kHz RT=390kΩ
-
2
- % VIN=7 ~ 48V
[Enable block]
Threshold voltage
Sink current
VEN
0.8 1.7 2.6 V
IEN
- 13 50 µA VEN =5V
* Not designed to be radiation-resistant.
BD9781HFP (Unless otherwise specified, Ta=-40˚C ~ +125˚C,VIN=13.2V,VEN/SYNC=5V)
Parameter
Symbol
Standby circuit current
ISTB
Circuit current
IQ
[SW block]
POWER MOS FET ON resistance
RON
Operating output current of overcurrent protection IOLIMIT
Output leak current
IOLEAK
[Error Amp block]
Reference voltage1
VREF1
Reference voltage2
VREF2
Reference voltage input regulation
∆VREF
Input bias current
IB
Maximum FB voltage
VFBH
Minimum FB voltage
VFBL
FB sink current
IFBSINK
FB source current
IFBSOURCE
Soft start time
TSS
[Oscillator block]
Oscillation frequency
FOSC
Frequency input regulation
∆FOSC
[Enable/Synchronizing input block]
Threshold voltage
VEN/SYNC
Sink current
IEN/SYNC
External synchronizing frequency
FSYNC
Limits
Min. Typ. Max.
Unit
- 0 10 µA
-
3
8 mA
- 0.5 0.9 Ω
4 8 -A
- 0 30 µA
0.98 1.00 1.02 V
0.97 1.00 1.03 V
- 0.5 - %
-1 - - µA
2.4 2.5 - V
- 0.05 0.10 V
-5.0 -3.0 -0.5 mA
70 120 170 µA
- 5 - mS
82 102 122 kHz
- 1 -%
0.8 1.7 2.6 V
- 35 90 µA
- 150 - kHz
Condition
VEN/SYNC=0V,Ta=25ºC
IO=0A
ISW=50mA
* Design assurance
VIN=35V,VEN/SYNC=0V
VFB=VINV,Ta=25ºC
VFB=VINV
VIN=5 ~ 35V
VINV=1.1V
VINV=0.5V
VINV=1.5V
VFB=1.5V,VINV=1.5V
VFB=1.5V,VINV=0.5V
* Design assurance
RT=390kΩ
VIN=5 ~ 35V
VEN/SYNC=5V
FEN/SYNC=150kHz
* Not designed to be radiation-resistant.
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3/16
2010.02 - Rev. B
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