BD670 Просмотр технического описания (PDF) - STMicroelectronics
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BD670 Datasheet PDF : 6 Pages
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BD677/677A/678/678A/679/679A/680/680A/681/682
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Rthj- amb Thermal Resistance Junction-ambient
Max
Max
3.12
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCE = rated VCBO
VCE = rated VCBO
TC = 100 oC
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
Co lle ct or- Em it t er
VCEO(sus )∗ Sustaining Voltage
VCE = half rated VCEO
VEB = 5 V
IC = 50 mA
for BD677/677A/678/678A
for BD679/679A/680/680A
for BD681/682
Co lle ct or- Em it t er
VCE(sat)∗ Saturation Voltage
VBE∗
Base-Emitter Voltage
for BD677/678/679/680/681/682
IC = 1.5 A IB = 30 mA
for BD677A/678A/679A/680A
IC = 2 A
IB = 40 mA
for BD677/678/679/680/681/682
IC = 1.5 A VCE = 3 V
for BD677A/678A/679A/680A
IC = 2 A
VCE = 3 V
hFE∗
DC Current G ain
for BD677/678/679/680/681/682
IC = 1.5 A VCE = 3 V
for BD677A/678A/679A/680A
IC = 2 A
VCE = 3 V
hf e
Small Signal Current
Gain
IC = 1.5 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VCE = 3 V
f = 1MHz
Min.
60
80
100
750
750
1
Typ .
M a x.
0.2
2
0.5
2
2.5
2.8
2.5
2.5
Unit
mA
mA
mA
mA
V
V
V
V
V
V
V
Safe Operating Areas
Derating Curve
2/6
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