BAW100 Просмотр технического описания (PDF) - TY Semiconductor

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Компоненты Описание

производитель

BAW100

Silicon Switching Diode Array

TY Semiconductor 

Product specification

BAW100

Electrical Characteristics Ta = 25

Parameter

Breakdown voltage

Symbol

VBR

Forward voltage

VF

Reverse current

IR

Diode capacitance

Cd

Reverse recovery time

trr

Conditions

I(BR) = 100 A

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

VR = 75 V

VR = 25 V, TA = 150

VR = 75 V, TA = 150

VR = 0 V, f = 1 MHz

IF = 10 mA, IR = 10 mA, RL = 100

measured at IR = 1 mA

Min

Typ

Max

Unit

85

V

715

855

mV

1000

1250

1

30

A

50

2

pF

6

ns

Marking

Marking

JSs

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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