AP2201K-2.8TRE1 Просмотр технического описания (PDF) - BCD Semiconductor
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AP2201K-2.8TRE1 Datasheet PDF : 12 Pages
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150mA RF ULDO REGULATOR
Typical Performance Characteristics (Continued)
Preliminary Datasheet
AP2201
20
18 AP2201-2.8V
16
14
12
10
V =1.8V
EN
V =2.0V
EN
V =3.0V
EN
V =4.0V
EN
V =3.8V, C =1.0µF, C =2.2µF,
IN
IN
L
I =100µA, C =1nF
OUT
BYP
8
6
4
2
0
-60 -40 -20
0 20 40 60 80 100 120 140
Junction Temperature (oC)
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-60 -40 -20
AP2201-2.8V
V =on
EN
V =off
EN
C =1.0µF,C =2.2µF,C =1nF
IN
L
BYP
V =3.8V,I =5mA
IN
OUT
0 20 40 60 80 100 120 140
Junction Temperature (oC)
Figure 9. Enable Current vs. Junction Temperature
Figure 10. Enable Voltage vs. Junction Temperature
200
150
100
50
0
10
100
1000
10000
Bypass Capacitor (pF)
Figure 11. Noise vs. Bypass Capacitor
AP2201-2.8V
Time (µs)
Figure 12. Load Transient
(Conditions: VIN=3.8V, CBYP=680pF, VEN=2V,
IOUT=5mA to 50mA, CL=2.2µF)
Jun. 2005 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
8
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