5SMX12K1701 Просмотр технического описания (PDF) - ABB
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5SMX12K1701 Datasheet PDF : 5 Pages
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Collector (-emitter)
breakdown voltage
V(BR)CES VGE = 0 V, IC = 1 mA, Tvj = 25 °C
Collector-emitter
saturation voltage
Collector cut-off current
VCE sat IC = 75 A, VGE = 15 V
ICES
VCE = 1700 V, VGE = 0 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Gate leakage current
Gate-emitter threshold voltage
Gate charge
Input capacitance
Output capacitance
Reverse transfer capacitance
IGES
VGE(TO)
Qge
Cies
Coes
Cres
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
IC = 3 mA, VCE = VGE, Tvj = 25 °C
IC = 75 A, VCE = 900 V, VGE = -15 ..15 V
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
Internal gate resistance
RGint
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
td(on)
VCC = 900 V, IC = 75 A,
RG = 15 Ω, VGE = ±15 V,
Tvj = 25 °C
Tvj = 125 °C
tr
Lσ = 160 nH,
inductive load
Tvj = 25 °C
Tvj = 125 °C
td(off)
VCC = 900 V, IC = 75 A,
RG = 15 Ω, VGE = ±15 V,
Tvj = 25 °C
Tvj = 125 °C
tf
Lσ = 160 nH,
inductive load
Tvj = 25 °C
Tvj = 125 °C
VCC = 900 V, IC = 75 A,
VGE = ±15 V, RG = 15 Ω,
Tvj = 25 °C
Eon
Lσ = 160 nH,
inductive load,
FWD: 5SLX12G1700
Tvj = 125 °C
Eoff
VCC = 900 V, IC = 75 A,
VGE = ±15 V, RG = 15 Ω,
Lσ = 160 nH,
inductive load
Tvj = 25 °C
Tvj = 125 °C
Short circuit current
ISC
tpsc V 9GE = 15 V, Tvj = 125 °C,
VCC = 1300 V, VCEM 9
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Doc. No. 5SYA1619-01 July 03
page 2 of 5
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