2360 Просмотр технического описания (PDF) - STMicroelectronics

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2360

Low voltage fast-switching PNP power transistors

STMicroelectronics 

2STD2360, 2STF2360, 2STN2360

2

Electrical characteristics

Electrical characteristics

TCASE = 25°C; unless otherwise specified.

Table 4. Electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ICBO

Collector cut-off current

(IE = 0)

IEBO

Emitter cut-off current

(IC = 0)

VBE(on) Base-emitter on voltage

VCE(sat)(1)

Collector-emitter

saturation voltage

VBE(sat) (1)

Base-emitter saturation

voltage

hFE(1) DC current gain

VCB = - 60 V

-100 nA

VEB = - 6 V

-100 nA

VCE = - 2 V IC = - 100 mA -630 -650 -730 mV

IC = - 2 A

IC = - 3 A _

IB = - 100 mA

IB = - 150 mA

-200 -320 mV

-300 -500 mV

IC = - 2 A _ IB = -100 mA

-0.9 -1.2 V

IC = - 100 mA_ VCE = - 2 V 80

IC = - 1 A

_ VCE = - 2 V 160

400

Resistive load

td

Delay time

tr

Rise time

ts

Storage time

tf

Fall time

IC = - 3 A

VCC = - 10 V

IB(on) = - IB(off) = - 300 mA

VBE(off) = 5 V

fT

Transition frequency

IC = - 0.1 A __ VCE = - 10 V

1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %

10 15 ns

75 100 ns

250 350 ns

35 50 ns

130

MHz

2.1

Typical characteristics (curves)

Figure 2. DC current gain (VCE = - 2 V)

Figure 3. DC current gain (VCE = - 5 V)

Doc ID 13309 Rev 5

3/11

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